unisonic technologies co., ltd 2sd468 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2008 unisonic technologies co., ltd qw-r211-003.b low frequency power amplifier ? features * low frequency power amplifier * complement to 2sb562 to-92 1 to-92nl 1 *pb-free plating product number: 2sd468l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing 2sd468-x-t92-b 2sd468l-x-t92-b to-92 e c b tape box 2sd468-x-t92-k 2sd468l-x-t92-k to-92 e c b bulk 2SD468-X-T9N-B 2sd468l-x-t9n-b to-92nl e c b tape box 2sd468-x-t9n-k 2sd468l-x-t9n-k to-92nl e c b bulk
2sd468 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r211-003.b ? absolute maximum ratings (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 25 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5 v collector current i c 1 a collector peak current i cp 1.5 a collector power dissipation p c 0.9 w junction temperature t j +150
storage temperature t stg -55 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo ic=10 a, i e =0 25 v collector emitter breakdown voltage bv ceo ic=1ma, r be = 20 v emitter base breakdown voltage bv ebo i e =10 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 1 a dc current transfer ratio h fe v ce =2v, ic=0.5a (note) 85 240 collector emitter saturation voltage v ce(sat) ic=0.8a, i b =0.08a (note) 0.2 0.5 v base emitter voltage v be v ce =2v, ic=0.5a (note) 0.79 1 v gain bandwidth product f t v ce =2v, ic=0.5a (note) 190 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 22 pf note: pulse test ? classification of h fe rank b c range 85 - 170 120 - 240
2sd468 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r211-003.b ? typical characteristics collector power dissipation, p c (w) collector current, i c (a) p c =0.9w base to emitter voltage, v be (v) 0 0.2 0.4 0.6 0.8 1.0 1 3 10 30 100 300 1,000 typical transfer characteristics collector current, i c (ma) ta=75 25 v ce =2v 5 10 50 200 500 1 3 10 30 100 300 1,000 collector current, i c (ma) dc current transfer ratio, h fe dc current transfer ratio vs. collector current 20 100 1,000 2,000 5,000 v ce =2v ta=75 25
2sd468 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r211-003.b ? typical characteristics(cont.) 510 50 20 2 5 10 20 50 100 200 collector to base voltage, v cb (v) collector output capacitance vs. collector to base voltage f=1mhz i e =0 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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